In this work, we develop and use 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting using MIT materials. Employing radiofrequency (RF) electronic circuits with a MIT material like vanadium Dioxide, VO 2, requires appropriate characterization tools and fabrication processes. Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, terahertz and optoelectronic devices.